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FJD3305H1 -- NPN Silicon Transistor
April 2009
FJD3305H1 NPN Silicon Transistor
High Voltage Switch Mode Application
* Fast Speed Switching * Wide Safe Operating Area * Suitable for Electronic Ballast Application
1
DPAK
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings *
Symbol
VCBO VCEO VEBO IC ICP IB PC TJ TSTG
TC=25C unless otherwise noted
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation, Ta = 25C Tc = 25C Junction Temperature Storage Temperature
Value
700 400 9 4 8 2 1.1 50 150 -65 ~ 150
Units
V V V A A A W W C C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics T =25C unless otherwise noted
a
Symbol
RJA RJC
Parameter
Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case
Value
110 2.0
Units
C/W C/W
* Device mounted on minimum pad size
Ordering Information
Part Number
FJD3305H1TM
Marking
J3305H1
Package
D-PAK
Packing Method
Tape & Reel
Remarks
(c) 2009 Fairchild Semiconductor Corporation FJD3305H1 Rev.A 1
www.fairchildsemi.com
FJD3305H1 -- NPN Silicon Transistor
Electrical Characteristics * TC=25C unless otherwise noted
Symbol
BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(sat)
Parameter
Collector-Base Breakdwon Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain * Collector-Emitter Saturation Voltage
Conditions
IC = 500A, IE = 0 IC = 5mA, IB = 0 IE = 500A, IC = 0 VCB = 700V, IE = 0 VEB = 9V, IC = 0 VCE = 5V, IC = 1A VCE = 5V, IC = 2A IC = 1A, IB = 0.2A IC = 2A, IB = 0.5A IC = 4A, IB = 1A IC = 1A, IB = 0.2A IC = 2A, IB = 0.5A VCE = 10V, IC = 0.5A VCB = 10V, f = 1MHz VCC = 125V, IC = 2A IB1 = -IB2 = 0.4A RL = 62.5
Min.
700 400 9
Typ.
Max
Units
V V V A A
1 1 19 8 28 40 0.5 0.6 1.0 1.2 1.6 4 65 0.8 4.0 0.9
V V V V V MHz pF s s s
VBE(sat) fT Cob tON tSTG tF
Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Turn On Time Storage Time Fall Time
* Pulse Test: Pulse Width300s, Duty Cycle2%
(c) 2009 Fairchild Semiconductor Corporation FJD3305H1 Rev. A 2
www.fairchildsemi.com
FJD3305H1 -- NPN Silicon Transistor
Typical Performance Characteristics
Figure 1. Static Characteristic
4.5 4.0 100
Figure 2. DC Current Gain
VCE = 5V
IC [A], COLLECTOR CURRENT
3.5 3.0 2.5 2.0 1.5
IB = 300mA IB = 200mA IB = 150mA IB = 100mA IB = 50mA
Ta = 75 C
O
Ta = 125 C
O
hFE, DC CURRENT GAIN
IB = 250mA
10
Ta = - 25 C
O
Ta = 25 C
O
1.0 0.5 0.0 0 1 2 3 4 5 6 7 8 9 10
1 0.01
0.1
1
10
VCE [V], COLLECTOR-EMITTER VOLTAGE
IC [A], COLLECTOR CUTRRENT
Figure 3. Collector- Emitter Saturation Voltage
10
Figure 4. Base - EmitterSaturation Voltage
10
VCE(sat) [V], SATURATION VOLTAGE
Ta = 125 C
1
O
O
VBE(sat) [V], SATURATION VOLTAGE
IC = 4 IB
IC = 4 IB
Ta = - 25 C Ta = 25 C
1
O
O
Ta = 75 C
O
Ta = - 25 C
0.1
Ta = 25 C
O
Ta = 125 C
O
Ta = 75 C
O
0.01 0.01
0.1
1
10
0.1 0.01
0.1
1
10
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
Figure 5. Switching Time
1 0 0 00
Figure 6. Capacitance
F = 1M H z
tSTG
tF & tSTG [s], SWITCHING TIME
C ib
Ta = 25 C
1000
tF
Ta = 125 C
O
CAPACITANCE[pF]
O
1 0 00
1 00
C ob
10
100
IB1 = - IB2 = 0.4A VCC = 125V
1
1
1
10
100
IC [A], COLLECTOR CURRENT
R E VER SE VO LT AG E[V]
(c) 2009 Fairchild Semiconductor Corporation FJD3305H1 Rev. A 3
www.fairchildsemi.com
FJD3305H1 -- NPN Silicon Transistor
Figure 7. Reverse Biased Safe Operating Area
Figure 8. RBSOA Collector- Emitter Saturation Voltage
10
10
VBE(OFF)=-9V VBE(OFF)=-7V
VCE(sat) [V], SATURATION VOLTAGE
IC [A], COLLECTOR CURRENT
8
VBE(OFF)=-5V VBE(OFF)=-3V
6
8
VCC=50V, LC=1mH VBE(OFF)=-5V, IB2=-1.0A RBB=0.7 Ohms
Ic/Ib = 5
6
Ic/Ib = 4
4
4
Ic/Ib = 3
2
VCC=50V, LC=1mH IC/IB=5, IB2=-1.0A RBB=0.7 Ohms
2
0 0 100 200 300 400 500 600 700 800
0 1 2 3 4 5 6 7 8
VCE [V], COLLECTOR-EMITTER VOLTAGE
IC [A], COLLECTOR CURRENT
Figure 9. RBSOA Turn-on Pulse Width vs Collector Current
Ic/Ib = 5
200
60
Figure 10. Power Derating
Ic/Ib = 4
160
PC[W], POWER DISSIPATION
Turn-on PW [uS]
VCC=50V, LC=1mH VBE(OFF)=-5V, IB2=-1.0A RBB=0.7 Ohms
50
Ic/Ib = 3
40
120
30
80
20
40
10
0 1 2 3 4 5 6 7 8
0 0 25 50
o
75
100
125
150
175
IC [A], COLLECTOR CURRENT
Tc[ C], CASE TEMPERATURE
Figure 11. RBSOA Test Circuit
(c) 2009 Fairchild Semiconductor Corporation FJD3305H1 Rev. A 4
www.fairchildsemi.com
FJD3305H1 -- NPN Silicon Transistor
Mechanical Dimensions
D-PAK
Dimensions in Millimeters
(c) 2009 Fairchild Semiconductor Corporation FJD3305H1 Rev. A 5
www.fairchildsemi.com
FJD3305H1 FJD3305H1 NPN Silicon Transistor
(c) 2009 Fairchild Semiconductor Corporation FJD3305H1 Rev. A
www.fairchildsemi.com 6

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